Q.F. Wang, K. Maex, S. Kubicek, R. Jonckheere, B. Kerkwijk, R. Verbeeck, S. Biesemans, K. De Meyer
{"title":"New CoSi/sub 2/ SALICIDE technology for 0.1 /spl mu/m processes and below","authors":"Q.F. Wang, K. Maex, S. Kubicek, R. Jonckheere, B. Kerkwijk, R. Verbeeck, S. Biesemans, K. De Meyer","doi":"10.1109/VLSIT.1995.520838","DOIUrl":null,"url":null,"abstract":"A new CoSi/sub 2/ salicide technology with thin Ti capping layer has been developed to improve the formation and thermal stability of sub-0.1 /spl mu/m CoSi/sub 2//Poly stacks. Previously both Co/Ti and conventional processes have been used successfully to produce 0.1 /spl mu/m lines. However, the former technique has a wider process window to obtain uniform silicide films reproducibly.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
A new CoSi/sub 2/ salicide technology with thin Ti capping layer has been developed to improve the formation and thermal stability of sub-0.1 /spl mu/m CoSi/sub 2//Poly stacks. Previously both Co/Ti and conventional processes have been used successfully to produce 0.1 /spl mu/m lines. However, the former technique has a wider process window to obtain uniform silicide films reproducibly.
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