A power-gated MPU with 3-microsecond entry/exit delay using MTJ-based nonvolatile flip-flop

H. Koike, T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, S. Miura, H. Honjo, T. Sugibayashi
{"title":"A power-gated MPU with 3-microsecond entry/exit delay using MTJ-based nonvolatile flip-flop","authors":"H. Koike, T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, S. Miura, H. Honjo, T. Sugibayashi","doi":"10.1109/ASSCC.2013.6691046","DOIUrl":null,"url":null,"abstract":"We propose a novel power-gated microprocessor unit (MPU) using a nonvolatile flip-flop (NV-F/F) with magnetic tunnel junction (MTJ). By using the NV-F/F to store the MPU's internal state, this MPU realizes power-gating operation with a small 3-microsecond entry/exit delay penalty in power-on/power-off, which is one order of magnitude faster than a conventional MPU's deep power down mode. To achieve this short entry/exit delay, an appropriate NV-F/F circuit, which can perform stable high speed store/recall operations, has been developed. The MPU will help in the realization of low power systems because of its easy controllability for the power gating mode.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6691046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

We propose a novel power-gated microprocessor unit (MPU) using a nonvolatile flip-flop (NV-F/F) with magnetic tunnel junction (MTJ). By using the NV-F/F to store the MPU's internal state, this MPU realizes power-gating operation with a small 3-microsecond entry/exit delay penalty in power-on/power-off, which is one order of magnitude faster than a conventional MPU's deep power down mode. To achieve this short entry/exit delay, an appropriate NV-F/F circuit, which can perform stable high speed store/recall operations, has been developed. The MPU will help in the realization of low power systems because of its easy controllability for the power gating mode.
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采用基于mtj的非易失性触发器,具有3微秒进入/退出延迟的电源门控MPU
我们提出了一种新型的电源门控微处理器单元(MPU),使用具有磁隧道结(MTJ)的非易失性触发器(NV-F/F)。通过使用NV-F/F存储MPU的内部状态,该MPU实现了电源门控操作,在上电/下电时只有3微秒的进入/退出延迟,比传统MPU的深度下电模式快一个数量级。为了实现这种短的输入/退出延迟,已经开发了一种合适的NV-F/F电路,可以执行稳定的高速存储/召回操作。由于其易于控制的功率门控模式,将有助于低功耗系统的实现。
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