New precision wafer bonding technologies for 3DIC

Isao Sugaya, Hajime Mitsuishi, Hidehiro Maeda, K. Okamoto
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引用次数: 6

Abstract

A new precision wafer-to-wafer (W2W) bonding system for three-dimensional integrated circuits (3DICs) fabrication including a new precision alignment methodology and a unique thermocompression bonding procedure is proposed. Experimental results show that the alignment capability is 100 nm or better, and permanent bonding accuracy of 260 nm (|mean| + 3σ) in 300 mm Cu wafer bonding. An analysis of overlay error components is useful for identifying the causes of the error and improving the tool conditions. These capabilities are key enablers for the future of cost-effective 3DIC manufacturing.
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3DIC晶圆键合新技术
提出了一种新的用于三维集成电路(3dic)制造的精密晶对晶(W2W)键合系统,包括一种新的精密对准方法和一种独特的热压键合工艺。实验结果表明,在300 mm的Cu晶片上,对准能力达到100 nm以上,永久键合精度达到260 nm (|mean| + 3σ)。对叠加误差分量的分析有助于找出误差产生的原因,改善刀具状况。这些能力是未来具有成本效益的3DIC制造的关键推动因素。
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