Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT)

Abstract

Noise parameters of the Horizontal Current Bipolar Transistor (HCBT) Technology are examined for the first time. Impact of technological parameters (i.e., three different collector doping profiles) on the noise performance is analyzed and explained. The HCBT with the uniform n-collector profile has the smallest minimum noise figure $(\pmb{N}F_{\min})$ of 0.91 dB at $\pmb{f}=\mathbf{0.9}$ GHz and 1.09 dB at $\pmb{f}=\pmb{1.5}$ GHz, while the HCBT with the low-doped n-collector has the highest associated gain implying the best noise-gain tradeoff. All three HCBTs have the optimum collector current $(\pmb{I}_{\text{Copt}})$ at the lowest $\pmb{NF}_{\min}$ of around 5 mA and 10 mA at 0.9 GHz and 1.5 GHz, respectively, as well as the optimum impedance $\pmb{Z}_{\text{opt}}$ close to $\mathbf{50}\ \Omega$. Several low-noise amplifiers are fabricated with $\pmb{NF}=\mathbf{1.22}\ \mathbf{dB}$ and power gain up to 17.2 dB at 0.9 GHz.