{"title":"Correlation between chemical composition of transitional layer and electro-physical properties of Me-n-InP Schottky barriers","authors":"G. S. Korotchenkov, N. P. Bejan","doi":"10.1109/SMICND.1998.732384","DOIUrl":null,"url":null,"abstract":"In this report results of the analysis of tunnel transparency and physical-chemical properties of transitional layer between metal and InP real surface have been presented. It was determined that electro-physical properties of Me-n-InP Schottky barriers are correlated with chemical composition of InP own oxides. For explanation of shown effects, it was proposed the model of transitional layer and mechanism of it's property changing during thermal treatment.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this report results of the analysis of tunnel transparency and physical-chemical properties of transitional layer between metal and InP real surface have been presented. It was determined that electro-physical properties of Me-n-InP Schottky barriers are correlated with chemical composition of InP own oxides. For explanation of shown effects, it was proposed the model of transitional layer and mechanism of it's property changing during thermal treatment.
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