{"title":"Design and Implementation of a Novel CMOS-MEMS Single Proof-Mass Tri-Axis Accelerometer","authors":"Chih-Ming Sun, M. Tsai, W. Fang","doi":"10.1109/MEMSYS.2009.4805506","DOIUrl":null,"url":null,"abstract":"This study presents a novel single proof-mass tri-axis capacitive CMOS MEMS accelerometer to reduce the footprint of chip. A serpentine out-of-plane (Z-axis) spring is designed to reduce cross-axis error. A magnetic actuation for Z-axis self-test is also presented. The tri-axis accelerometer has been successfully implemented using TSMC 2P4M process and our in-house post-process. Measurement results show that sensitivities (non-linearity) of etch direction are 0.53mV/G (2.64%) of X-axis, 0.28mV/G (3.15%) of Y-axis, and 0.2mV/G (3.36%) of Z-axis. The cross-axis sensitivities range from 1% to 8.3%, and the measurement range is between 0.8~6G, respectively.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2009.4805506","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
This study presents a novel single proof-mass tri-axis capacitive CMOS MEMS accelerometer to reduce the footprint of chip. A serpentine out-of-plane (Z-axis) spring is designed to reduce cross-axis error. A magnetic actuation for Z-axis self-test is also presented. The tri-axis accelerometer has been successfully implemented using TSMC 2P4M process and our in-house post-process. Measurement results show that sensitivities (non-linearity) of etch direction are 0.53mV/G (2.64%) of X-axis, 0.28mV/G (3.15%) of Y-axis, and 0.2mV/G (3.36%) of Z-axis. The cross-axis sensitivities range from 1% to 8.3%, and the measurement range is between 0.8~6G, respectively.
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