Reactively matched 3-stage C-X-Ku band GaN MMIC power amplifier

Abstract

A 3-stage wideband power amplifier (PA) using a 0.15 pm gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) process from NRC is designed, fabricated, and measured. After characterization of the high electron mobility transistor (HEMT), a non-linear model was created from the measured data for use in the design. The reactively matched 3.8 mm × 1.8 mm PA also uses resistive elements for gain compensation and circuit stability. Measurements at 20 dBm source power show 35–38 dBm output power and 10–18% PAE over a 6 to 17 GHz bandwidth. These results demonstrate the highest output power per die area for a 3-stage GaN MMIC PA of this bandwidth in this power range.