Novel dual gate high voltage TFT with variable doping slot

S. Krishnan, E. M. Sankara Narayanan, Y.Z. Xu, F. Clough, M. M. De Souza, D. Flores, M. Vellvehí, J. Millán
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引用次数: 3

Abstract

A novel high performance dual gated, glass compatible polycrystalline silicon HVTFT with blocking voltage in excess of 300 V is demonstrated. This device shows an order of magnitude improvement in the on-state performance in comparison to its offset drain (DG-OD) counterpart. The significantly enhanced performance of this dual gate device is due to an offset region doped through slots of reducing dimensions from the source (control gate) to the drain (sub-gate).
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新型可变掺杂槽双栅高压TFT
展示了一种新型的高性能双门控、玻璃兼容多晶硅HVTFT,其阻塞电压超过300 V。与偏移漏极(DG-OD)相比,该器件显示出一个数量级的on-state性能改进。这种双栅极器件的性能显著增强是由于从源极(控制栅极)到漏极(子栅极)通过减小尺寸的槽掺杂了偏移区域。
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