Ballistic electron microscopy of a metal molecule interface

L. Kunardi, Zheng Yi, C. Troadec, Ma Han Thu Lwin, W. Knoll, N. Chandrasekhar
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Abstract

We present studies on a Ag/ HS–(CH2)4–T3–H (T3C4SH)/ Au diode using nanometer scale resolution, ballistic electron emission microscopy (BEEM). Images show spatially non-uniform carrier injection. A WKB calculation is carried out and compared with the experimental data. The results indicate that molecular levels are being accessed in the BEEM experiment, since the measured currents are larger than purely tunneling contribution. Our results are consistent with previously published results on a similar molecule [ 1]. Physical origins of the non-uniform carrier injection and its implications are discussed.
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金属分子界面的弹道电子显微镜
本文采用纳米尺度分辨率的弹道电子发射显微镜(BEEM)研究了Ag/ HS - (CH2) 4-T3-H (T3C4SH)/ Au二极管。图像显示空间上不均匀的载流子注入。进行了WKB计算,并与实验数据进行了比较。结果表明,在BEEM实验中,由于测量电流比纯隧道贡献大,因此可以达到分子水平。我们的结果与先前发表的类似分子的结果一致[1]。讨论了非均匀载流子注入的物理根源及其意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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