{"title":"Reliability characterization of power devices which operate under power cycling","authors":"Dan Simon, C. Boianceanu, G. De Mey, V. Topa","doi":"10.1109/SMICND.2015.7355192","DOIUrl":null,"url":null,"abstract":"The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.
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