{"title":"GaAs multiplexer chip for ATM switching","authors":"J. Jakobsen","doi":"10.1109/GAAS.1995.528955","DOIUrl":null,"url":null,"abstract":"This paper describes the design of a GaAs multiplexer chip which can be used for the implementation of an ATM switch fabric. In order to achieve low power, a self-timed FIFO with automatic power off was designed. For high speed and low power a static flip-flop with push-pull output stage was also designed. The chip works at 1.15 GHz, corresponding to a throughput of 10 Gb/s. This is achieved at a power consumption of 1.2 W.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper describes the design of a GaAs multiplexer chip which can be used for the implementation of an ATM switch fabric. In order to achieve low power, a self-timed FIFO with automatic power off was designed. For high speed and low power a static flip-flop with push-pull output stage was also designed. The chip works at 1.15 GHz, corresponding to a throughput of 10 Gb/s. This is achieved at a power consumption of 1.2 W.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于ATM交换的GaAs多路复用芯片
本文介绍了一种用于实现ATM交换结构的GaAs多路复用芯片的设计。为了实现低功耗,设计了一种自动断电的自定时FIFO。为满足高速低功耗的要求,还设计了一种带推挽输出级的静态触发器。该芯片工作在1.15 GHz,相当于10gb /s的吞吐量。这是在1.2 W的功耗下实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A two layer hermetic-like coating process for on-wafer encapsulation of GaAs MMICs A very high isolation GaAs SPDT switch IC sealed in an ultra compact plastic package The effects of hydrogen and deuterium incorporation on the electrical performance of a GaAs MESFET 0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1