Investigation of GaN and Si Based Full-Bridge Converters for DC Motor Drive

Abstract

Gallium nitride (GaN) high electron mobility transistor (HEMT) is a promising candidate for the high-efficiency and high-frequency motor drive applications when compared with the silicon (Si) counterpart. In this work, the GaN-based and Si-based devices based full bridge converters for DC motor drive are investigated and compared. Firstly, three different driving schemes including bipolar, unipolar and synchronous rectification are analyzed. Then, performance comparison between 40-V/l0-A GaN HEMT and Si MOSFET are conducted based on the datasheet and double pulse test experiment results. Finally, the model of DC motor drive is proposed based on PLECS thermal simulation. Based on the model, the impact of three schemes and two different switches on the efficiency is investigated. Results show the GaN-based full-bridge converter has higher efficiency and lower power loss.