S. Gendt, M. Heyns, T. Conard, H. Hohira, O. Richard, Wilfried Vandervorst, M. Caymax, J. W. Maes, Marko Tuominen
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引用次数: 3
Abstract
Oxide layers of metals such as Zr and Al are possible candidates to replace SiO/sub 2/ as gate dielectric for sub-1 nm EOT (Equivalent Oxide Thickness). We discuss the use of a cluster tool featuring pre-cleaning, surface treatment, metal oxide deposition and electrode deposition modules. Contamination is found to be well within specifications. Throughput is reasonable and we indicate ways how to further improve it. We describe briefly the four modules, and give first process results. An EOT of 0.77 nm measured in a capacitor with a combined Al/sub 2/O/sub 3/, and ZrO/sub 2/ layer is presented. We discuss the importance of a cluster tool for this application based on those process results.
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