Random GaAs IC's ESD failures caused by RF test handler

Y. Anand, D. Crowe, A. Feinberg, C. Jones
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引用次数: 3

Abstract

This paper describes a case study of GaAs IC ESD failures caused in a RF test handler. The test handler caused yield problems compared with another tester. A small insulator inside the test fixture assembly was found to generate up to 200 volt ESD pulses, causing sporadic device failures. This problem was resolved by replacing the insulator with a piece of static dissipative material. In this paper, we present tester investigation and evaluation, material investigation, experimental results, and conclusions from production follow-up.
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随机GaAs集成电路由射频测试处理器引起的ESD故障
本文介绍了射频测试处理器中GaAs集成电路ESD失效的案例研究。与另一个测试程序相比,测试处理程序会导致良率问题。测试夹具组件内的一个小绝缘体被发现产生高达200伏的ESD脉冲,导致零星的设备故障。这个问题通过用一块静态耗散材料代替绝缘体得到了解决。在本文中,我们介绍了测试调查和评估,材料调查,实验结果和生产跟踪的结论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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