First Demonstration of WSe2 Based CMOS-SRAM

Abstract

In this work, we demonstrate a CMOS static random-access-memory (SRAM) using WSe2 as a channel material for the first time, providing comprehensive DC analyses for transition metal dichalcogenide (TMD) material-based memory applications. A tri-gate design is adopted for the n-type MOSFET, while an air-stable, oxygen plasma induced doping scheme is introduced to implement the p-type MOSFET. DC measurements of SRAM cells demonstrate a unique dynamic tunability enabled by modulating the n-FET doping level through electrostatically gating the extended source/drain regions. Furthermore, with various read/write assist techniques, SRAM operation at low $V_{DD}$ of 0.8V is achieved. Our low power demonstration and its 2D ultra-thin material nature suggest promising applications of WSe2 for flexible electronics and Internet of Things (IoT).