Electron trapping in SIMOX with supplemental implant

Abstract

Silicon-on-insulator (SOI) technology provides integrated circuits with several advantages over bulk silicon technology. These advantages include increased speed (due to reduced capacitance), dielectric isolation (prevents latch-up), high temperature operation, higher packing density, and enhanced performance in radiation environments. The leading SOI technology today is Separation by Implantation of Oxygen (SIMOX). The performance of devices fabricated in the silicon overlayer is highly dependent on the electrical properties of the buried oxide. A persistent problem with buried oxide materials has been the presence of large numbers of electron traps in the oxide. Several schemes have been tried in order to reduce or eliminate this effect. This study presents the results from implanting supplemental oxygen into the buried oxide. Avalanche electron injection was used to determine the density of oxide trapped charge due to electron traps in the buried oxide.<>