F. Heider, Helfried Schwarzfurtner, Mario Lugger, Sang-Joon Cho, T. Trenkler
{"title":"AFM Surface Roughness and Depth Measurement of Trenches with High Aspect Ratio","authors":"F. Heider, Helfried Schwarzfurtner, Mario Lugger, Sang-Joon Cho, T. Trenkler","doi":"10.1109/ASMC.2019.8791811","DOIUrl":null,"url":null,"abstract":"Roughness measurements on epitaxial layers before and after etching were done with an atomic force microscope (AFM) with sub-Angstrom repeatability. Furthermore, surface roughness was monitored with AFM after chemical mechanical polishing, before a wafer was bonded to another wafer. It was observed that measuring in non-contact mode reduces the tip wear and extends the life time of AFM tips. We also show that a resist recess in narrow trenches which cannot be measured with scatterometry is easily measured with a high-aspect-ratio tip on AFM. The offset between the AFMs in two different fabs is currently less than 5 nm, when a trench depth recipe is transferred from one tool to another.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"16 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791811","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Roughness measurements on epitaxial layers before and after etching were done with an atomic force microscope (AFM) with sub-Angstrom repeatability. Furthermore, surface roughness was monitored with AFM after chemical mechanical polishing, before a wafer was bonded to another wafer. It was observed that measuring in non-contact mode reduces the tip wear and extends the life time of AFM tips. We also show that a resist recess in narrow trenches which cannot be measured with scatterometry is easily measured with a high-aspect-ratio tip on AFM. The offset between the AFMs in two different fabs is currently less than 5 nm, when a trench depth recipe is transferred from one tool to another.