{"title":"Experiments on electron-beam irradiation effects on junction field effect transistors","authors":"C. Codreann, E. Iliescu","doi":"10.1109/SMICND.1998.732373","DOIUrl":null,"url":null,"abstract":"The paper describes some results concerning electron-beam irradiation effects on dual monolithic n-channel junction field effect transistors. Devices were gradually irradiated up to 8 Mrad in steps of 1 Mrad or 2 Mrad at room temperature. After each irradiation operation, their electrical parameters were measured and finally we have analyzed the structural modifications in devices and their irradiation hardness.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper describes some results concerning electron-beam irradiation effects on dual monolithic n-channel junction field effect transistors. Devices were gradually irradiated up to 8 Mrad in steps of 1 Mrad or 2 Mrad at room temperature. After each irradiation operation, their electrical parameters were measured and finally we have analyzed the structural modifications in devices and their irradiation hardness.
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