A wideband, low-power, high-sensitivity and small-size 2.5-GHz static frequency divider IC

I. Kipnis, J. F. Kukielka, C. C. Leung, T. Lo, M. Dutta, S. Knorr, C. Snapp
{"title":"A wideband, low-power, high-sensitivity and small-size 2.5-GHz static frequency divider IC","authors":"I. Kipnis, J. F. Kukielka, C. C. Leung, T. Lo, M. Dutta, S. Knorr, C. Snapp","doi":"10.1109/BIPOL.1988.51091","DOIUrl":null,"url":null,"abstract":"A static divide-by-four frequency prescalar IC operating for input signals from 20 MHz to 5.5 GHz is presented. The circuit was fabricated using Avantek's f/sub T/=12 GHz f/sub max/=20 GHz non-polysilicon-emitter ISOSAT-I silicon bipolar process. The die fits in a standard microwave transistor package due to its small size and single-bias-supply requirement. An integrated input buffer was provided to obtain high sensitivity and to avoid self-oscillation in the absence of an input signal. This work presents an example of a medium-scale-integration silicon bipolar IC operating at GHz frequencies (or Gbit/s rates).<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

A static divide-by-four frequency prescalar IC operating for input signals from 20 MHz to 5.5 GHz is presented. The circuit was fabricated using Avantek's f/sub T/=12 GHz f/sub max/=20 GHz non-polysilicon-emitter ISOSAT-I silicon bipolar process. The die fits in a standard microwave transistor package due to its small size and single-bias-supply requirement. An integrated input buffer was provided to obtain high sensitivity and to avoid self-oscillation in the absence of an input signal. This work presents an example of a medium-scale-integration silicon bipolar IC operating at GHz frequencies (or Gbit/s rates).<>
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一种宽带、低功耗、高灵敏度、小尺寸的2.5 ghz静态分频IC
提出了一种用于20mhz ~ 5.5 GHz输入信号的静态四分频预标量集成电路。该电路采用Avantek的f/sub T/=12 GHz f/sub max/=20 GHz非多晶硅发射极ISOSAT-I硅双极工艺制造。由于其小尺寸和单偏置电源要求,该芯片适合标准微波晶体管封装。集成的输入缓冲器提供了高灵敏度和避免自振荡在没有输入信号。这项工作提出了一个在GHz频率(或Gbit/s速率)下工作的中等规模集成硅双极IC的例子。
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The best-case power-delay products for polysilicon-contacted bipolar-transistor gates. A theoretical study The effect of emitter sidewall isolation on the emitter junction in a double layer polysilicon bipolar process Delay analysis for BiCMOS drivers Comparing techniques for fabrication polysilicon contacted emitter bipolar transistors Thin base formation by double diffused polysilicon technology
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