Novel dielectrics for SOI structures

Abstract

Two novel dielectrics for SOI structures are proposed. They are diamond and silicon carbide, replacing the silicon dioxide dielectric currently used in SOI structures. The authors report on some preliminary results of fabrication of buried diamond silicon-on-insulator structures by the zone melting recrystallization technique. Diamond grown by CVD (chemical vapor deposition) on silicon is chosen as the substrate. The CVD diamond film was grown on a 3" silicon wafer. A Raman spectrum peak was seen at 1334-35 cm/sup -1/, indicating that the film is diamond. Crystal size and growth characteristics were studied using high frequency capacitance and leakage current through the diamond film.<>