Simultaneous and Independent Measurement of Stress and Temperature Using a Single Field Effect Transistor Based Sensor

Abstract

This paper reports on the simultaneous and independent measurement of mechanical stress and temperature using a single field effect transistor with multiple source/drain contacts. A stress sensitivity of Sσ= -405 µ V/MPa V of the device originates from the shear piezoresistive effect, i.e. the pseudo-Hall effect. This sensitivity exhibits a very small temperature coefficient of only 914 ppm/K. Temperature values are acquired from the temperature dependence of the threshold voltage VTand extracted using a recently reported regularization method with a temperature sensitivity of SVT= -1.67 mV/K. We report VTto be stress independent in the measured range of 0 MPa to 15.6 MPa and in the temperature range of 25 ° C to 150 ° C.