T. Tran-Quinn, N. Bell, R. Cook, M. Fung, J. W. Andrews, D. Hilscher, D. Szmyd, V. Saikuma, R. Ketcheson, P. Kellawon, S. Calvelli
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引用次数: 0
Abstract
A localized product yield degradation was observed on 0.25um BiCMOS product and was found to correlate to suppression of the NPN base and emitter currents. The addition of an ozone plasma clean prior to emitter polysilicon deposition helped to improve base current distribution across the wafers.
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