10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

C. Potier, J. Jacquet, C. Lacam, N. Michel, C. Dua, M. Oualli, S. Delage, S. Piotrowicz, C. Chang, O. Patard, L. Trinh-Xuan, J. Gruenenpuett, P. Gamarra, P. Altuntas, E. Chartier
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Abstract

This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31] GHz and demonstrate over this bandwidth a saturated output power of 40dBm. Each stage uses 8x50μm gate width HEMTs fabricated with a 0.I5μm gate length on 70μm thick SiC substrate.
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基于InAlGaN/GaN HEMT技术的10W Ka波段MMIC功率放大器
本文介绍了一种基于InAlGaN/GaN HEMT技术的MMIC功率放大器(PA)在Ka波段的测量结果。三级MMIC在[25-31]GHz的带宽内工作,并在此带宽上展示了40dBm的饱和输出功率。每级使用8x50μm栅极宽度的hemt,采用0。50 μm栅极长度在70μm厚的SiC衬底上。
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