Design improvement of RF 3D MIM damascene capacitor

S. Capraro, C. Bermond, T. Vo, J. Piquet, B. Fléchet, M. Thomas, A. Farcy, J. Torres, S. Crémer, E. Guichard, A. Haen
{"title":"Design improvement of RF 3D MIM damascene capacitor","authors":"S. Capraro, C. Bermond, T. Vo, J. Piquet, B. Fléchet, M. Thomas, A. Farcy, J. Torres, S. Crémer, E. Guichard, A. Haen","doi":"10.1109/ESSDERC.2007.4430961","DOIUrl":null,"url":null,"abstract":"High frequency characterizations and simulations of 3D damascene metal-insulator-metal (MIM) capacitors are presented. We focused on the impact of the design on the performance of integrated capacitors. Results showed that properties of MIM capacitor get improved with specific design recommendations on electrodes shape.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

High frequency characterizations and simulations of 3D damascene metal-insulator-metal (MIM) capacitors are presented. We focused on the impact of the design on the performance of integrated capacitors. Results showed that properties of MIM capacitor get improved with specific design recommendations on electrodes shape.
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射频三维MIM damascene电容的设计改进
介绍了三维damascene金属-绝缘子-金属(MIM)电容器的高频特性和仿真。我们关注的是设计对集成电容器性能的影响。结果表明,通过对电极形状的具体设计,MIM电容器的性能得到了改善。
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