Kahori Kise, M. Fujii, S. Tomai, Y. Ueoka, H. Yamazaki, Satoshi Urakawa, K. Yano, Dapeng Wang, M. Furuta, M. Horita, Y. Ishikawa, Y. Uraoka
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引用次数: 0
Abstract
Degradation by Joule heating of the thin-film transistors (TFTs) is one of the important issues for realizing next-generation displays. We have investigated the thermal distribution on the channel region of transparent amorphous oxide semiconductor TFT in pulse operation using an infrared imaging system. We also discussed the relationship between the self-heating temperature and the degradation.
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