A. Nazarov, C. Lee, A. Kranti, I. Ferain, R. Yan, N. Akhavan, P. Razavi, R. Yu, J. Colinge
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引用次数: 1
Abstract
Combined measurements of random telegraph noise of drain current and drain current — gate voltage characteristic are employed for determination of field-effect charge carrier mobility in surface channel of nanowire inversion mode and accumulation mode MOSFETs with taking into account parasitic source-drain resistance.
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