The 3D RESURF junction

F. Udrea, A. Popescu, W. Milne
{"title":"The 3D RESURF junction","authors":"F. Udrea, A. Popescu, W. Milne","doi":"10.1109/SMICND.1998.732318","DOIUrl":null,"url":null,"abstract":"This paper reports a new device concept-the 3D RESURF junction, which is applicable to a large class of power devices which we term 3D power devices. The new class of devices features considerably superior breakdown performance compared to any lateral power devices reported to date and challenges the state-of-the art vertical devices such as the VDMOSFET. The 3D Double Gate devices also benefit by having a low on-resistance due to carrier modulation in the drift region. The 3D RESURF is demonstrated numerically through extensive, advanced 2-D and 3-D simulations.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

This paper reports a new device concept-the 3D RESURF junction, which is applicable to a large class of power devices which we term 3D power devices. The new class of devices features considerably superior breakdown performance compared to any lateral power devices reported to date and challenges the state-of-the art vertical devices such as the VDMOSFET. The 3D Double Gate devices also benefit by having a low on-resistance due to carrier modulation in the drift region. The 3D RESURF is demonstrated numerically through extensive, advanced 2-D and 3-D simulations.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
3D RESURF连接点
本文提出了一种新的器件概念——三维复用结,它适用于一大类功率器件,我们称之为三维功率器件。与迄今为止报道的任何横向功率器件相比,新型器件具有相当优越的击穿性能,并挑战了最先进的垂直器件,如VDMOSFET。3D双栅器件还受益于由于在漂移区域中的载波调制而具有低导通电阻。通过广泛、先进的2d和3D模拟,对3D RESURF进行了数值验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Low parasitic elements and self aligned contacts technology for high frequency bipolar integrated circuits a-SiC(O,N):H thin films-their optical properties and possible applications Metallic contacts on porous silicon layers A new propylamine sensor using artificial dimorphite An accurate method of 6H-SiC PIN structures parameter extraction using C-V characteristics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1