Validating an ASIC standard cell library

W. Agatstein, K. McFaul, P. Themins
{"title":"Validating an ASIC standard cell library","authors":"W. Agatstein, K. McFaul, P. Themins","doi":"10.1109/ASIC.1990.186174","DOIUrl":null,"url":null,"abstract":"The accurate validation of the CHMOS III and CHMOS IV cell-based libraries is discussed. The validation methodology consists of library test chips which isolate each cell in a measurable and meaningful circuit. These chips use the customer design, layout, and simulation environment, incorporating all library cells. Manufacturing the test chip wafers across the worst-case process corners further guarantees that customer simulation bounds silicon performance. The characterization process encompasses process, temperature, and voltage extremes. For customer-specific operating conditions, K-factors for temperature and voltage are generated.<<ETX>>","PeriodicalId":126693,"journal":{"name":"Third Annual IEEE Proceedings on ASIC Seminar and Exhibit","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Third Annual IEEE Proceedings on ASIC Seminar and Exhibit","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASIC.1990.186174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

The accurate validation of the CHMOS III and CHMOS IV cell-based libraries is discussed. The validation methodology consists of library test chips which isolate each cell in a measurable and meaningful circuit. These chips use the customer design, layout, and simulation environment, incorporating all library cells. Manufacturing the test chip wafers across the worst-case process corners further guarantees that customer simulation bounds silicon performance. The characterization process encompasses process, temperature, and voltage extremes. For customer-specific operating conditions, K-factors for temperature and voltage are generated.<>
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验证ASIC标准单元库
讨论了基于细胞的CHMOS III和CHMOS IV文库的准确验证。验证方法由库测试芯片组成,该芯片将每个单元隔离在可测量且有意义的电路中。这些芯片使用客户设计、布局和仿真环境,结合了所有库单元。在最坏情况下制造测试芯片晶圆进一步保证了客户模拟限制硅性能。表征过程包括工艺、温度和电压极值。对于客户特定的操作条件,会产生温度和电压的k因子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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