A 12Gb/s, 8.6µApp input sensitivity, monolithic-integrated fully differential optical receiver in CMOS 45nm SOI process

N. Mehta, Chen Sun, M. Wade, Sen Lin, M. Popović, V. Stojanović
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引用次数: 9

Abstract

A high-sensitivity, fully-differential optical receiver for high-density photonic interconnects is presented. To realize fully-differential operation, a 3-dB power splitter and SiGe photodetector are integrated with the receiver, all in a CMOS 45nm SOI process. The proposed receiver improves sensitivity by suppressing common-mode and supply noise through fully-differential (FD) operation, achieving 12Gb/s at BER <10−12 with input sensitivity of 8.6µAPP while consuming 4.3mW. To understand the effectiveness of the proposed solution, we compare it to a conventional single-ended (SE) receiver on the same test-chip. Measured sensitivity is >2× better than the closest state-of-the-art design, achieving same energy per bit at higher data-rate.
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12Gb/s, 8.6µApp输入灵敏度,CMOS 45nm SOI工艺单片集成全差分光接收器
提出了一种用于高密度光子互连的高灵敏度全差分光接收机。为了实现全差分操作,接收器集成了3db功率分路器和SiGe光电探测器,全部采用CMOS 45nm SOI工艺。该接收机通过全差分(FD)操作来抑制共模和电源噪声,从而提高了灵敏度,在BER为2倍的情况下,比最先进的设计实现了12Gb/s的性能,在更高的数据速率下实现了相同的每比特能量。
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