60-GHz LNA using a Hybrid Transmission Line and Conductive Path to Ground Technique in Silicon

Abstract

A monolithic 60 GHz low-noise amplifier (LNA) using a passive noise suppression technique and an enhanced hybrid transmission line structure, fabricated in a 0.12 mum SiGe BiCMOS process is presented. This design provides the entire circuit with a conductive path to ground the P-substrate. Near active device regions, noise injection and crosstalk paths are shunted to ground. Measurements of the single-stage LNA show peak performance at 59 GHz exhibiting a gain of 14.5 dB, a NF of 4.1 dB, a + 1.5 dBm output compression point, while consuming 4.5 mA from a 1.8 v supply. Across the entire V-band (57 - 64 GHz), the LNA provides a minimum gain of 12 dB with an average noise figure of 5 dB. This LNA has the highest known figure of merit reported for a 60 GHz application.