CAD: The numerical and analytical methods combined for the analysis of IC's thermal fields

V. A. Koval, A. Ostapchuk, Igor V. Farmaga, D. Fedasyuk
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引用次数: 5

Abstract

The problem of microelectronic device thermal field analysis has been formalized. The presented method of the initial and boundary problem formalization makes it possible to take account of various boundary conditions and to carry out adaptation of the received mathematical model to the object of designing and operation conditions by CAD methods. The combination of numerical and analytical methods has been developed for solution of three-dimensional parabolic equations. The said combination makes it possible to receive both stationary and nonstationary solutions as well as to approximate in boundary conditions along z coordinate the nonhomogeneity of functions and their derivatives along x,y coordinates. The testing (investigation) of the computational accuracy and the adequacy of the received mathematical models and algorithms has been carried out. The software system of microelectronic devices thermal design has been developed, the system making it possible to decrease the development time and to improve the quality of microelectronic devices.<>
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CAD:集成电路热场分析的数值与解析相结合的方法
对微电子器件热场分析问题进行了形式化分析。所提出的初始问题和边界问题形式化方法可以考虑到各种边界条件,并利用CAD方法对所接收的数学模型进行适应设计对象和运行条件的调整。提出了数值与解析相结合的方法求解三维抛物型方程。上述组合可以同时得到平稳解和非平稳解,也可以在沿z坐标的边界条件下近似函数及其导数沿x、y坐标的非齐次性。对所接受的数学模型和算法的计算精度和充分性进行了检验(调查)。开发了微电子器件热设计软件系统,为缩短开发时间、提高微电子器件质量提供了可能。
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