B. Suh, Seungwook Choi, Y. Wee, Jung-Eun Lee, Junho Lee, Sun-jung Lee, Soo-Geun Lee, Hong-jae Shin, N. Lee, Ho-Kyu Kang, K. Suh
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引用次数: 3
Abstract
We have investigated TiZr alloy as a new Cu barrier material for low cost and high performance Cu/low-k interconnects. TiZrN ternary nitride was used as a Cu diffusion barrier and TiZr as an adhesion promotion layer. The issue of metal line resistance shift was suppressed using a novel 2-step annealing procedure. Multi-level Cu metal wiring integration was successfully carried out and the enhanced electrical performance of low via resistance with high via yield was obtained. Improved electromigration and stress-induced voiding resistances also have been demonstrated.
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