C. Huang, D. S. Yu, A. Chin, C. Wu, W. Chen, Chunxiang Zhu, M. Li, B. Cho, D. Kwong
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引用次数: 29
Abstract
We demonstrate for the first time fully silicided NiSi (4.55 eV) and germanided NiGe (5.2 eV) dual gates on 1.9 nm-SiO/sub 2//Si and Al/sub 2/O/sub 3//Ge-on-insulator (GOI) MOSFETs (EOT= 1.7 nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO/sub 2//Si show mobility close to universal mobility while on Al/sub 2/O/sub 3//GOI show /spl sim/2.0/spl times/ higher peak electron and hole mobility than Al on Al/sub 2/O/sub 3//Si, with the special advantage of NiSi and NiGe being compatible to current VLSI process lines.
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