I-Cheng Lin, Chih-Yao Huang, Chuan-Jane Chao, M. Ker
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引用次数: 17
Abstract
Latchup failure induced by ESD protection circuits occurred in a high-voltage IC product. Latchup occurred anomalously at only several output pins. All output pins have nearly identical layouts except the side output pin has a N-well resistor of RC gate-coupled PMOS beside. It was later found this N-well resistor is the main cause of inducing latchup.
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