K. Fukuda, D. Okamoto, S. Harada, Yasunori Tanaka, Y. Yonezawa, T. Deguchi, S. Katakami, H. Ishimori, S. Takasu, M. Arai, K. Takenaka, H. Fujisawa, M. Takei, K. Matsumoto, N. Ohse, Mina Ryo, C. Ota, K. Takao, M. Mizukami, Tomohisa Kato, T. Izumi, T. Hayashi, K. Nakayama, K. Asano, H. Okumura, T. Kimoto
{"title":"Ultrahigh voltage SiC bipolar devices","authors":"K. Fukuda, D. Okamoto, S. Harada, Yasunori Tanaka, Y. Yonezawa, T. Deguchi, S. Katakami, H. Ishimori, S. Takasu, M. Arai, K. Takenaka, H. Fujisawa, M. Takei, K. Matsumoto, N. Ohse, Mina Ryo, C. Ota, K. Takao, M. Mizukami, Tomohisa Kato, T. Izumi, T. Hayashi, K. Nakayama, K. Asano, H. Okumura, T. Kimoto","doi":"10.1109/WIPDA.2013.6695556","DOIUrl":null,"url":null,"abstract":"Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (Rdiff,on) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si3N4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2013.6695556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (Rdiff,on) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si3N4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.
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