{"title":"A new extraction method for BSIM3v3 model parameters of RF silicon MOSFETs","authors":"Seonghearn Lee, Hyun-Kyu Yu","doi":"10.1109/ICMTS.1999.766223","DOIUrl":null,"url":null,"abstract":"A new parameter extraction technique utilizing S-parameter data at the GHz range is proposed for a SPICE BSIM3v3 model of an RF MOSFET. The extraction of capacitance parameters is carried out using S-parameter sets measured under specific bias conditions for various device sizes. The resistances (R/sub g/, R/sub d/) and inductances are obtained by fitting the frequency responses of Z-parameter equations, and source and substrate resistances are determined using S-parameter optimization. Good correspondence is observed between measured and modeled S-parameters up to 12 GHz.","PeriodicalId":273071,"journal":{"name":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1999.766223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A new parameter extraction technique utilizing S-parameter data at the GHz range is proposed for a SPICE BSIM3v3 model of an RF MOSFET. The extraction of capacitance parameters is carried out using S-parameter sets measured under specific bias conditions for various device sizes. The resistances (R/sub g/, R/sub d/) and inductances are obtained by fitting the frequency responses of Z-parameter equations, and source and substrate resistances are determined using S-parameter optimization. Good correspondence is observed between measured and modeled S-parameters up to 12 GHz.
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