Recombination lifetime measurements in SOI materials using a depletion-mode MOSFET

Abstract

The authors measured recombination lifetime in SOI by using a depletion-mode MOSFET. The drain-source current transient of depletion-mode MOSFETs when a reversed step bias is applied to the gate is studied at elevated temperatures. A theoretical analysis is performed by considering the different generation processes as functions of temperature. At high temperature, the minority carriers required for the inversion charge come mainly from the quasi-neutral region beneath the depletion region and from the nearby Si film-buried oxide interface through a generation-diffusion process; generation from the depletion region is neglected as well as the generation from the front gate interface. This analysis leads to a determination of a function containing the drain-source current varying linearly with time.<>