Vertically aligned extracellular microprobe arrays/(111) integrated with (100)-silicon mosfet amplifiers

Hiroki Makino, Kohei Asai, Masahiro Tanaka, S. Yamagiwa, H. Sawahata, I. Akita, M. Ishida, T. Kawano
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引用次数: 3

Abstract

We report a heterogeneous integration of vertically aligned extracellular micro-scale silicon (Si)-probe arrays/(111) with MOSFET amplifiers/(100), by IC processes and subsequent vapor-liquid-solid (VLS) growth of Si-probes. To improve the extracellular recording capability of the microprobe with a high impedance of > 1 MΩ at 1 kHz, here we integrated (100)-Si source follower buffer amplifiers by ~700°C VLS growth compatible (100)-Si MOSFET technology. Without on-chip source follower, output/input signal ratio of the microprobe in saline was 0.59, which was improved to 0.72 by the on-chip source follower configuration, while the signal-to-noise ratio (SNR) was improved to 12.5 dB in the frequency of extracellular recording. These results indicate that the integration of the source follower buffer amplifiers becomes a powerful way to enhance the performance of high impedance microprobe electrodes in neural recordings.
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垂直排列的细胞外微探针阵列/(111)集成(100)硅most效应放大器
我们报道了垂直排列的细胞外微尺度硅(Si)探针阵列/(111)与MOSFET放大器/(100)的异质集成,通过IC工艺和随后的气液固(VLS)生长的Si探针。为了提高高阻抗(> 1 MΩ)微探针在1 kHz时的细胞外记录能力,我们采用~700°C VLS生长兼容(100)-Si MOSFET技术集成了(100)-Si源跟随器缓冲放大器。无片上源跟随器时,微探针在生理盐水中的输出/输入信号比为0.59,采用片上源跟随器后,微探针的输出/输入信号比提高到0.72,而在细胞外记录频率下,信噪比(SNR)提高到12.5 dB。这些结果表明,集成源跟随器缓冲放大器是提高神经记录中高阻抗微探针电极性能的有效途径。
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