Voltage Reference and Zero Current Detector Monolithically Integrated on p-GaN Technology Designed for Process Corners Compensation

Abstract

This work describes two designed and fabricated circuits for power device integration in 650 V e-mode GaN-on-Si technology and gives their main measured characteristics. The first circuit is a voltage reference designed to compensate process, voltage and temperature (PVT). The advantage of this circuit over state-of-the-art circuits is its performance of regulation, low current consumption and surface required (only 100 µm x 60 µm in the first prototype built). The second circuit is a zero-crossing current detector that is also designed to be insensitive to process variations. It exhibits stable static characteristics and bandwidth observed in simulation of more than 10 MHz. The convenience of this circuit is its simplicity because no differential amplifier is used to make a comparison. Both circuits are designed to be integrated with power transistors in GaN technology to be used in ACF or other topologies capable of switching at 650 V.