{"title":"Analytical model for the InP/InGaAs uni-travelling carrier photodiode","authors":"S. Srivastava, K. Roenker","doi":"10.1109/ISDRS.2003.1272009","DOIUrl":null,"url":null,"abstract":"A one dimensional, drift-diffusion based, analytical model is reported which describes the operation and performance of the InP-based uni-traveling carrier photodiode (UTC-PD). The UTC-PD has been proposed as a replacement for the InGaAs PIN photodiode for long wavelength optical communications. In this work, the development of an analytical model is described for use in investigation of the device's operation and the effects of the device structure on the operational performance of the device. The effects of a finite conduction band barrier at the collector end of the absorption layer on the photocurrent and onset of high injection effects is examined. Also included in the model is the leakage current due to a finite conduction band barrier at the blocking end of the absorption layer. The results are discussed in relation to reports of the device's experimentally observed performance and numerical modeling results.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A one dimensional, drift-diffusion based, analytical model is reported which describes the operation and performance of the InP-based uni-traveling carrier photodiode (UTC-PD). The UTC-PD has been proposed as a replacement for the InGaAs PIN photodiode for long wavelength optical communications. In this work, the development of an analytical model is described for use in investigation of the device's operation and the effects of the device structure on the operational performance of the device. The effects of a finite conduction band barrier at the collector end of the absorption layer on the photocurrent and onset of high injection effects is examined. Also included in the model is the leakage current due to a finite conduction band barrier at the blocking end of the absorption layer. The results are discussed in relation to reports of the device's experimentally observed performance and numerical modeling results.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
