A simple theory to determine the attenuation amplitudes of quantum oscillations

L. Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu
{"title":"A simple theory to determine the attenuation amplitudes of quantum oscillations","authors":"L. Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu","doi":"10.1109/MIEL.2002.1003302","DOIUrl":null,"url":null,"abstract":"Tunneling currents through ultrathin SiO/sub 2/ films have been observed to have small oscillatory components at high electric fields. In this article, a relation between the well known reflection coefficient and transmission coefficient of electron tunneling through a barrier and the amplitude of Fowler-Nordheim tunneling current oscillations is obtained based on the principle of quantum mechanics. A simple relation describing the factors affecting the amplitude of quantum oscillations is obtained based on the reflection coefficient and the transmission coefficient. It is found that the simple relation agrees well with the numerical results based on numerical calculations. A linear relation between the logarithmic attenuation of the oscillation amplitude and variable parameters such as barrier height, oxide thickness and the kinetic energy of incident electrons is observed. The results show that the oscillation amplitude attenuation can be accurately and simply described by this analytical solution.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Tunneling currents through ultrathin SiO/sub 2/ films have been observed to have small oscillatory components at high electric fields. In this article, a relation between the well known reflection coefficient and transmission coefficient of electron tunneling through a barrier and the amplitude of Fowler-Nordheim tunneling current oscillations is obtained based on the principle of quantum mechanics. A simple relation describing the factors affecting the amplitude of quantum oscillations is obtained based on the reflection coefficient and the transmission coefficient. It is found that the simple relation agrees well with the numerical results based on numerical calculations. A linear relation between the logarithmic attenuation of the oscillation amplitude and variable parameters such as barrier height, oxide thickness and the kinetic energy of incident electrons is observed. The results show that the oscillation amplitude attenuation can be accurately and simply described by this analytical solution.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一个确定量子振荡衰减幅度的简单理论
通过超薄SiO/ sub2 /薄膜的隧道电流在高电场下具有较小的振荡分量。本文基于量子力学原理,得到了众所周知的电子隧穿势垒的反射系数和透射系数与Fowler-Nordheim隧穿电流振荡振幅之间的关系。基于反射系数和透射系数,得到了影响量子振荡振幅的简单关系式。通过数值计算发现,简单关系与数值结果吻合较好。振荡振幅的对数衰减与势垒高度、氧化层厚度和入射电子动能等参数呈线性关系。结果表明,该解析解可以准确、简单地描述振动幅度衰减。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Spontaneous recovery of positive gate bias stressed power VDMOSFETs Non-linear interaction of space charge waves in GaAs semiconductor Field effect transistors-from silicon MOSFETs to carbon nanotube FETs Silicon resonant cavity enhanced UV flame detector Evaluation of epi layer resistivity effects in mixed-signal submicron CMOS integrated circuits
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1