{"title":"Optimization of Vertical GaN SGT-MOSFET for Low Ron","authors":"N. Jaiswal, V. N. Ramakrishnan, Sukhendu deb Roy","doi":"10.1109/WiPDAAsia49671.2020.9360257","DOIUrl":null,"url":null,"abstract":"We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage.
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