{"title":"YBa2Cu3O7-δ Nano-SQUIDs Fabricated by Focused Helium Ion Beam Direct Writing","authors":"Hao Li, Han Cai, E. Cho, Yan-Ting Wang, S. Cybart","doi":"10.1109/ISEC46533.2019.8990947","DOIUrl":null,"url":null,"abstract":"We successfully fabricated high-transition temperature $(\\mathrm{high}-T_{C})$ nano-scale superconducting quantum interference devices (nano-SQUIDs) by using a 32-keV focused helium ion beam (FHIB). The $\\sim 0.5$ nm beam of the FHIB was used to disorder the crystaline lattice of YBa2Cu $3\\mathrm{O}_{7-\\delta}$ (YBCO) causing disorder that converts the material from superconductor to insulator at high dose. The SQUID loop size was 400 nm x 400 nm, with 200-nm wide Josephson junctions. Devices operated over a wide range of temperatures from 50 to 4 K and exhibited large voltage modulation with magnetic field as high as 500 $\\mu \\mathrm{V}$.","PeriodicalId":250606,"journal":{"name":"2019 IEEE International Superconductive Electronics Conference (ISEC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Superconductive Electronics Conference (ISEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEC46533.2019.8990947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We successfully fabricated high-transition temperature $(\mathrm{high}-T_{C})$ nano-scale superconducting quantum interference devices (nano-SQUIDs) by using a 32-keV focused helium ion beam (FHIB). The $\sim 0.5$ nm beam of the FHIB was used to disorder the crystaline lattice of YBa2Cu $3\mathrm{O}_{7-\delta}$ (YBCO) causing disorder that converts the material from superconductor to insulator at high dose. The SQUID loop size was 400 nm x 400 nm, with 200-nm wide Josephson junctions. Devices operated over a wide range of temperatures from 50 to 4 K and exhibited large voltage modulation with magnetic field as high as 500 $\mu \mathrm{V}$.