Huang-Chih Lin, Wei Liang, Lan Zhu, Zhen Cheng, Y. Zheng
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引用次数: 0
Abstract
In order to make the switched-inductor Quasi-Z source inverter have the function of energy bidirectional flowing in some special occasions, the diode in the topology is changed to insulation gate bipolar transistor (IGBT). The influence of capacitance and inductance parameters on zero and pole of bidirectional switched-inductor Quasi-Z source inverter is analyzed by using small signal model. The simulation of SVPWM4 based on shoot-through vector insert is finished.
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