{"title":"150nm SOI embedded SRAMs with very low SER","authors":"D. Nelson, H. Liu, K. Golke, A. Kohli","doi":"10.1109/SOI.2005.1563583","DOIUrl":null,"url":null,"abstract":"A split word line design technique that improves the soft error rate (SER) of high performance 150nm SOI embedded SRAMs is presented along with SER results.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563583","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A split word line design technique that improves the soft error rate (SER) of high performance 150nm SOI embedded SRAMs is presented along with SER results.
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