R. Gaska, J. Yang, D. Billingsley, B. Khan, G. Simin, H. Y. Wong, N. Braga, X. Hu, J. Deng, M. Shur, R. Mickevicius
{"title":"Insulated-Gate Integrated III-Nitride RF Switches","authors":"R. Gaska, J. Yang, D. Billingsley, B. Khan, G. Simin, H. Y. Wong, N. Braga, X. Hu, J. Deng, M. Shur, R. Mickevicius","doi":"10.1109/CSICS.2011.6062470","DOIUrl":null,"url":null,"abstract":"Monolithically integrated microwave switches based on insulated gate transistors benefit from extremely small leakage currents crucially important for large-periphery devices. Composite fast/slow gate design and nonlinearity compensation technique allow the insulated gate switches to achieving superior performance compared to existing RF switch types.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Monolithically integrated microwave switches based on insulated gate transistors benefit from extremely small leakage currents crucially important for large-periphery devices. Composite fast/slow gate design and nonlinearity compensation technique allow the insulated gate switches to achieving superior performance compared to existing RF switch types.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
