{"title":"SIMOX layers and interfaces studies with a new fast multichannel spectroscopic ellipsometer","authors":"B. Biasse, J. Stehle","doi":"10.1109/SOSSOI.1990.145757","DOIUrl":null,"url":null,"abstract":"A nondestructive optical technique, spectroscopic ellipsometry (SE), used to control top SiO/sub 2/, silicon, and buried SiO/sub 2/ layer thicknesses, as well as interfaces of these layers during SIMOX (separation by implantation of oxygen) wafer fabrication, is addressed. New improvements on SE give the capability to measure a complete spectrum within 1 s without losing useful information. Using this technique, it is also possible to characterize the evolution of layer thicknesses when the dose of implantation is increased at a given energy. The microspot option reduces the beam size from 3*9 mm/sup 2/ down to 150*150 mu m/sup 2/.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A nondestructive optical technique, spectroscopic ellipsometry (SE), used to control top SiO/sub 2/, silicon, and buried SiO/sub 2/ layer thicknesses, as well as interfaces of these layers during SIMOX (separation by implantation of oxygen) wafer fabrication, is addressed. New improvements on SE give the capability to measure a complete spectrum within 1 s without losing useful information. Using this technique, it is also possible to characterize the evolution of layer thicknesses when the dose of implantation is increased at a given energy. The microspot option reduces the beam size from 3*9 mm/sup 2/ down to 150*150 mu m/sup 2/.<>
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