{"title":"Impact ionization at low drain voltages in SOI FETs","authors":"J. B. Mckitterick","doi":"10.1109/SOSSOI.1990.145734","DOIUrl":null,"url":null,"abstract":"It is universally assumed that impact ionization has no noticeable effects in FETs at low drain voltages, e.g. 0.1 volts. It is pointed out that in SOI FETs without a body contact the effects of impact ionization, though somewhat subtle, are significant. Proper inclusion of impact ionization effects in modeling does not appear to affect the gross characteristics of the device, yet it has a profound impact on the correct interpretation of such derived quantities as lifetime.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
It is universally assumed that impact ionization has no noticeable effects in FETs at low drain voltages, e.g. 0.1 volts. It is pointed out that in SOI FETs without a body contact the effects of impact ionization, though somewhat subtle, are significant. Proper inclusion of impact ionization effects in modeling does not appear to affect the gross characteristics of the device, yet it has a profound impact on the correct interpretation of such derived quantities as lifetime.<>
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