{"title":"High-energy Al implantation techniques for power semiconductor devices","authors":"Jai Ho Choi, K. Saito, T. Yokota, A. Watanabe","doi":"10.1109/ISPSD.1996.509479","DOIUrl":null,"url":null,"abstract":"A high-energy Al implantation technique has been developed for the fabrication of high-power semiconductor devices. By using an implantation energy of 0.5 MeV or higher with a dosage of 1/spl times/10/sup 15/ atoms/cm/sup 2/, we obtained a p-region profile without using a film to prevent out-diffusion.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A high-energy Al implantation technique has been developed for the fabrication of high-power semiconductor devices. By using an implantation energy of 0.5 MeV or higher with a dosage of 1/spl times/10/sup 15/ atoms/cm/sup 2/, we obtained a p-region profile without using a film to prevent out-diffusion.
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