Plasma Process Classification Using Causal Discovery Technique

Kobayashi Dai, Kitsunezuka Masaki, Kataoka Yuki, Shi Jun
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Abstract

The plasma etching process for semiconductor fabrication is too complex to specify the causal structure of the mechanism especially of process variation. Therefore, prediction of etching performance is affected by correlation but not actual causal relationship to process variation. Such correlation is called pseudo correlation. In this research, we introduced the causal discovery technique to clarify the causality of the parameters in process. This method has been applied for experimental process data with consumed parts. The causal structure has been estimated reasonable and a model based on the structure have been achieved better prediction precision for process performance and parts consumption.
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基于因果发现技术的等离子体过程分类
半导体制造的等离子体刻蚀过程过于复杂,难以确定其机理的因果结构,特别是工艺变化的因果结构。因此,蚀刻性能的预测受工艺变化的相关性影响,而不是实际的因果关系。这种相关性被称为伪相关。在本研究中,我们引入了因果发现技术来澄清过程中参数的因果关系。该方法已应用于含废件的实验工艺数据。通过对因果结构的合理估计,建立了基于因果结构的模型,对工艺性能和零件消耗具有较好的预测精度。
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